IXFN56N90P 900V 56A SiC MOSFET Low Rds(on) 65mΩ Fast Switching High Frequency Robust Body Diode High Temp Operation TO-264 Package

IXFN56N90P 900V 56A SiC MOSFET Low Rds(on) 65mΩ Fast Switching High Frequency Robust Body Diode High Temp Operation TO-264 Package

Features

• International Standard Package

• miniBLOC, with Aluminium Nitride Isolation

• Low RDS(on) and QG

• Avalanche Rated

• Low Package Inductance

• Fast Intrinsic Rectifier

Applications

• Switch-Mode and Resonant-Mode Power Supplies

• DC-DC Converters

• Laser Drivers

• AC and DC Motor Drives

• Robotics and Servo Controls

Description

The IXFN56N90P is a high-voltage, high-current Silicon Carbide (SiC) MOSFET in a TO-264 package, designed to deliver superior efficiency and performance in demanding power conversion systems. It leverages the advantages of SiC technology, offering an excellent combination of a 900V breakdown voltage and a low 56A continuous current. Its very low on-state resistance (Rds(on)) of 65mΩ minimizes conduction losses, while the inherent properties of SiC enable extremely fast switching speeds with low losses, allowing for high-frequency operation. This reduces the size and cost of passive components like magnetics and capacitors. The MOSFET features a robust intrinsic body diode with excellent reverse recovery characteristics, enhancing its reliability in hard-switching applications. Its high-temperature operational capability and industry-standard package make it a robust and versatile solution for modern power designs.

INFORMATION

Drawing

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